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                             BYV25FD-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 7 March 2011 2 of 12 NXP Semiconductors BYV25FD-600 Enhanced ultrafast power diode 2. Pinning information [1] It is not possible to connect to pin 2 of the SOT428 package. 3. Ordering information 4. Limiting values Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected SOT428 (DPAK) 2 K cathode[1] 3 A anode mb K mounting base; cathode 3 2 mb 1 A 001aaa020 K Table 3. Ordering information Type number Package Name Description Version BYV25FD-600 DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current square-wave pulse; δ = 0.5 ; Tmb ≤ 121 °C; see Figure 1; see Figure 2 -5A IFRM repetitive peak forward current square-wave pulse; δ =0.5; tp = 25 μs; Tmb ≤ 121 °C -10A IFSM non-repetitive peak forward current tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 -60A tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 -66A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C |